The SCR parasitic structure is formed as a part of the totem-pole PMOS and NMOS transistor pair on the output drivers of the gates. The latch-up does not have to happen between the power rails - it can happen at any place where the required parasitic structure exists. See more In electronics, a latch-up is a type of short circuit which can occur in an integrated circuit (IC). More specifically, it is the inadvertent creation of a low-impedance path between the power supply rails of a MOSFET circuit, … See more It is possible to design chips to be resistant to latch-up by adding a layer of insulating oxide (called a trench) that surrounds both the NMOS and the PMOS transistors. This … See more • Latch-up in CMOS designs • Analog Devices: Winning the battle against latchup in CMOS analog devices • Maxwell Technologies Microelectronics: Latchup Protection Technology See more All CMOS ICs have latch-up paths, but there are several design techniques that reduce susceptibility to latch-up. In CMOS technology, there are a number of intrinsic bipolar … See more • See EIA/JEDEC STANDARD IC Latch-Up Test EIA/JESD78. This standard is commonly referenced in IC qualification specifications. See more WebApr 9, 2024 · The SCR device has been reported to be useful for ESD protection in high-frequency circuits due to its higher ESD robustness within a smaller layout area and lower parasitic capacitance [ 22 ]. Besides, the SCR device can be safely used without latchup danger in advanced CMOS technologies with low supply voltage [ 26 ].

ADALM2000 Activity: Silicon Controlled Rectifiers (SCR)

WebAbstract: The use of a p + buried layer beneath the p-well in CMOS is evaluated for controlling latch-up (parasitic SCR action). It is shown that this structure typically … WebSep 26, 2016 · Optimization of PESD implant design for ESD robustness of 5V drain-back N-LDMOSFET Abstract: An N-LDMOS ESD protection device with drain back and PESD optimization design is proposed. With PESD layer enclosing the N+ drain region, a parasitic SCR is created to achieve high ESD level. lidocaine cream 4% with hydrocortisone 2.5%

Introduction - Wiley

WebThe overall circuit is composed of a modified SCR structure (on the right side), and a parasitic diode structure (on the left side). It achieves a low Vt by injecting the trigger … WebApr 22, 2024 · Besides, the parasitic P-well/N-well diode in the SCR can provide the NS-mode ESD current path. Thus, SCR is the most promising ESD protection device in ESD protection design with low-capacitance ... WebThe SCR turns on and essentially causes a short between the V DD power supply and ground. Since all these MOS devices are located close together on the monolithic die, with appropriate external excitation, the parasitic SCR devices may turn on, a behavior common with poorly designed CMOS circuits. lidocaine back patches